Matches in SemOpenAlex for { <https://semopenalex.org/work/W4384304792> ?p ?o ?g. }
Showing items 1 to 68 of
68
with 100 items per page.
- W4384304792 endingPage "0" @default.
- W4384304792 startingPage "1" @default.
- W4384304792 abstract "A generic high-frequency model of two-port RF detectors, based on <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$I$</tex-math> </inline-formula> – <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$V$</tex-math> </inline-formula> curves and S-parameters measurements, is proposed and applied to the case of AlGaN/GaN field-effect transistors (FETs). The expression of the current responsivity (A/W) of any kind of transistor detector is derived for RF power injection through both the gate and the drain. The main novelty of the proposed model is the adequate consideration of the often neglected gate–drain coupling. The developed formalism also clarifies the voltage–current dc bias and the progressive and regressive power waves used to describe the RF excitation of the two-port nonlinear device. The obtained frequency-dependent closed-form expressions replicate very satisfactorily the current responsivity measurements made in AlGaN/GaN high-electron-mobility transistors (HEMTs) up to 67 GHz. To improve the physical understanding of the frequency dependence of the current responsivity of transistors, it is expressed in terms of the magnitude and phase of drain–gate voltage ratio. The analysis of different contributions to the RF responsivity reveals that the gate–drain capacitive coupling plays a key role in its frequency dependence." @default.
- W4384304792 created "2023-07-15" @default.
- W4384304792 creator A5008345935 @default.
- W4384304792 creator A5010605777 @default.
- W4384304792 creator A5024128666 @default.
- W4384304792 creator A5026402331 @default.
- W4384304792 creator A5084899088 @default.
- W4384304792 creator A5088689389 @default.
- W4384304792 date "2023-01-01" @default.
- W4384304792 modified "2023-10-17" @default.
- W4384304792 title "A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the $I$–TEXPRESERVE1 Curve and S-Parameters" @default.
- W4384304792 doi "https://doi.org/10.1109/tmtt.2023.3291391" @default.
- W4384304792 hasPublicationYear "2023" @default.
- W4384304792 type Work @default.
- W4384304792 citedByCount "0" @default.
- W4384304792 crossrefType "journal-article" @default.
- W4384304792 hasAuthorship W4384304792A5008345935 @default.
- W4384304792 hasAuthorship W4384304792A5010605777 @default.
- W4384304792 hasAuthorship W4384304792A5024128666 @default.
- W4384304792 hasAuthorship W4384304792A5026402331 @default.
- W4384304792 hasAuthorship W4384304792A5084899088 @default.
- W4384304792 hasAuthorship W4384304792A5088689389 @default.
- W4384304792 hasConcept C119599485 @default.
- W4384304792 hasConcept C121332964 @default.
- W4384304792 hasConcept C127413603 @default.
- W4384304792 hasConcept C165801399 @default.
- W4384304792 hasConcept C172385210 @default.
- W4384304792 hasConcept C178889773 @default.
- W4384304792 hasConcept C184720557 @default.
- W4384304792 hasConcept C192328126 @default.
- W4384304792 hasConcept C192562407 @default.
- W4384304792 hasConcept C23125352 @default.
- W4384304792 hasConcept C44838205 @default.
- W4384304792 hasConcept C49040817 @default.
- W4384304792 hasConcept C62520636 @default.
- W4384304792 hasConcept C68278764 @default.
- W4384304792 hasConceptScore W4384304792C119599485 @default.
- W4384304792 hasConceptScore W4384304792C121332964 @default.
- W4384304792 hasConceptScore W4384304792C127413603 @default.
- W4384304792 hasConceptScore W4384304792C165801399 @default.
- W4384304792 hasConceptScore W4384304792C172385210 @default.
- W4384304792 hasConceptScore W4384304792C178889773 @default.
- W4384304792 hasConceptScore W4384304792C184720557 @default.
- W4384304792 hasConceptScore W4384304792C192328126 @default.
- W4384304792 hasConceptScore W4384304792C192562407 @default.
- W4384304792 hasConceptScore W4384304792C23125352 @default.
- W4384304792 hasConceptScore W4384304792C44838205 @default.
- W4384304792 hasConceptScore W4384304792C49040817 @default.
- W4384304792 hasConceptScore W4384304792C62520636 @default.
- W4384304792 hasConceptScore W4384304792C68278764 @default.
- W4384304792 hasLocation W43843047921 @default.
- W4384304792 hasOpenAccess W4384304792 @default.
- W4384304792 hasPrimaryLocation W43843047921 @default.
- W4384304792 hasRelatedWork W2013663390 @default.
- W4384304792 hasRelatedWork W2084930654 @default.
- W4384304792 hasRelatedWork W2099357937 @default.
- W4384304792 hasRelatedWork W2124601276 @default.
- W4384304792 hasRelatedWork W2168602902 @default.
- W4384304792 hasRelatedWork W2356956065 @default.
- W4384304792 hasRelatedWork W2407791073 @default.
- W4384304792 hasRelatedWork W2595838235 @default.
- W4384304792 hasRelatedWork W2624232654 @default.
- W4384304792 hasRelatedWork W2799179006 @default.
- W4384304792 isParatext "false" @default.
- W4384304792 isRetracted "false" @default.
- W4384304792 workType "article" @default.