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• W4384626145 startingPage "405701" @default.
• W4384626145 abstract "Abstract The oxidation mechanism of atomically thin molybdenum disulfide (MoS 2 ) plays a critical role in its nanoelectronics, optoelectronics, and catalytic applications, where devices often operate in an elevated thermal environment. In this study, we systematically investigate the oxidation of mono- and few-layer MoS 2 flakes in the air at temperatures ranging from 23 °C to 525 °C and relative humidities of 10%–60% by using atomic force microscopy (AFM), Raman spectroscopy and x-ray photoelectron spectroscopy. Our study reveals the formation of a uniform nanometer-thick physical adsorption layer on the surface of MoS 2 , which is attributed to the adsorption of ambient moisture. This physical adsorption layer acts as a thermal shield of the underlying MoS 2 lattice to enhance its thermal stability and can be effectively removed by an AFM tip scanning in contact mode or annealing at 400 °C. Our study shows that high-temperature thermal annealing and AFM tip-based cleaning result in chemical adsorption on sulfur vacancies in MoS 2 , leading to p-type doping. Our study highlights the importance of humidity control in ensuring reliable and optimal performance for MoS 2 -based electronic and electrochemical devices and provides crucial insights into the surface engineering of MoS 2 , which are relevant to the study of other two-dimensional transition metal dichalcogenide materials and their applications." @default.
• W4384626145 created "2023-07-19" @default.
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• W4384626145 date "2023-07-18" @default.
• W4384626145 modified "2023-09-23" @default.
• W4384626145 title "Physical adsorption and oxidation of ultra-thin MoS₂ crystals: insights into surface engineering for 2D electronics and beyond" @default.
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• W4384626145 doi "https://doi.org/10.1088/1361-6528/ace1f7" @default.
• W4384626145 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37462320" @default.
• W4384626145 hasPublicationYear "2023" @default.
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