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• W4384785393 startingPage "177302" @default.
• W4384785393 abstract "Three-dimensional topological insulators (TIs) with gapless topological surface states (TSSs) have attracted considerable attention because of their unique properties. The transport of TSS is an essential means to explore the novel properties. The quantum Hall effect (QHE) of TSS is an important content in the study of topological insulator, for it is an important characteristic of the pure TSS transport. This paper briefly reviews the recent research progress of QHE in TIs. Firstly, we introduce the fundamental concepts of the QHE in TIs. In a three-dimensional TI, each TSS contributes to a half-integer QHE. An integer QHE should be observed due to the existence of top and bottom surface in TI. Then, we review the realization and development of QHE. With the optimization of TI materials, the QHE of TSS is observed in bulk-insulating TIs. Next, the phase transition and scaling law behavior of QHE in TIs are discussed. The dominance of electron-electron interaction of the TSS is revealed by the anomalous critical exponent. Also, the experimental studies of the magnetic proximity and gate voltage modulation of the QHE are reviewed in detail. Finally, the perspectives of QHE in TIs are discussed." @default.
• W4384785393 created "2023-07-20" @default.
• W4384785393 creator A5055941645 @default.
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• W4384785393 date "2023-01-01" @default.
• W4384785393 modified "2023-10-17" @default.
• W4384785393 title "Research progress of quantum Hall effect in topological insulator" @default.
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• W4384785393 doi "https://doi.org/10.7498/aps.72.20230698" @default.
• W4384785393 hasPublicationYear "2023" @default.
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