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• W4384929296 startingPage "2107" @default.
• W4384929296 abstract "Transition metal dichalcogenides (TMDs) have attracted much attention because of their unique characteristics and potential applications in electronic devices. Recent reports have successfully demonstrated the growth of 2-dimensional MoSxSey, MoxWyS2, MoxWySe2, and WSxSey monolayers that exhibit tunable band gap energies. However, few works have examined the doping behavior of those 2D monolayers. This study synthesizes WSxSey monolayers using the CVD process, in which different heating temperatures are applied to sulfur powders to control the ratio of S to Se in WSxSey. Increasing the Se component in WSxSey monolayers produced an apparent electronic state transformation from p-type to n-type, recorded through energy band diagrams. Simultaneously, p-type characteristics gradually became clear as the S component was enhanced in WSxSey monolayers. In addition, Raman spectra showed a red shift of the WS2-related peaks, indicating n-doping behavior in the WSxSey monolayers. In contrast, with the increase of the sulfur component, the blue shift of the WSe2-related peaks in the Raman spectra involved the p-doping behavior of WSxSey monolayers. In addition, the optical band gap of the as-grown WSxSey monolayers from 1.97 eV to 1.61 eV is precisely tunable via the different chalcogenide heating temperatures. The results regarding the doping characteristics of WSxSey monolayers provide more options in electronic and optical design." @default.
• W4384929296 created "2023-07-22" @default.
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• W4384929296 date "2023-07-19" @default.
• W4384929296 modified "2023-10-16" @default.
• W4384929296 title "Controllable Doping Characteristics for WSxSey Monolayers Based on the Tunable S/Se Ratio" @default.
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• W4384929296 doi "https://doi.org/10.3390/nano13142107" @default.
• W4384929296 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37513118" @default.
• W4384929296 hasPublicationYear "2023" @default.
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