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- W4384934427 abstract "Abstract The orthorhombic (O) phase formation process of Hf 0.5 Zr 0.5 O 2 (HZO) thin films on Ga 2 O 3 substrate is demonstrated. As deposited HZO thin film has the O and tetragonal (T) phases together with an amorphous phase and post-metallization annealing suppresses the crystallization into the T phase and promotes the O phase compared to annealing without a top electrode. Positive-up-negative-down measurement reveals that remanent polarization for the downwards (accumulation side) only originates from the ferroelectricity in HZO films on Ga 2 O 3 substrate. Using normal capacitance–voltage ( C–V ) measurements, a clear capacitance change from accumulation to depletion was observed. However, the C–V results also show clockwise hysteresis by charge injection from the semiconductor. High-speed C–V measurements at a voltage sweep frequency above 3 Hz show counterclockwise hysteresis, and hysteresis width saturates as the applied voltage increases. Based on these results, HZO thin films with O phase on Ga 2 O 3 substrates have ferroelectricity." @default.
- W4384934427 created "2023-07-22" @default.
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- W4384934427 date "2023-08-09" @default.
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- W4384934427 title "The ferroelectric orthorhombic phase formation of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films on (−201) β-Ga<sub>2</sub>O<sub>3</sub> substrate by atomic layer deposition" @default.
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- W4384934427 doi "https://doi.org/10.35848/1347-4065/ace917" @default.
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