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- W4384944408 abstract "This chapter discusses the potential of 2D materials as field-effect transistors from a modeling perspective, starting from the key features of monolayers. It introduces the importance of being able to simulate their electrical characteristics. The first 2D material under the ab initio microscope is MoS 2 ; the transition metal dichalcogenides (TMD) whose monolayer form was initially shown to provide excellent transistor characteristics is described in Radisavljevic et al. Besides TMDs, other 2D materials suitable for logic applications have emerged over the years, starting with black phosphorus: a monolayer of phosphorus atoms with a buckled honeycomb lattice. One of the key challenges 2D materials are facing is their contact with metallic electrodes. 2D materials do not only face challenges, they also offer opportunities in advanced logic applications. Their excellent electrostatic control properties are particularly appealing for the realization of band-to-band tunneling field-effect transistors." @default.
- W4384944408 created "2023-07-22" @default.
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- W4384944408 date "2023-07-21" @default.
- W4384944408 modified "2023-10-15" @default.
- W4384944408 title "Field‐Effect Transistors Based on 2D Materials" @default.
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