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- W4385079204 abstract "Ex-situ doping is used to introduce a constant dose <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$(sim 1 mathrm{x} 10^{13} mathbf{cm}^{-2})$</tex> of P atoms into Si nanosheets with thickness ranging from 70 to 6 nm. Full activation of P atoms is demonstrated in Si nanosheets with <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$mathbf{thickness h}geq boldsymbol{30}$</tex> nm. Conversely, progressive deactivation of dopant impurities is observed when decreasing the thickness of the Si nanosheets below 30 nm. Si nanosheets with thickness <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$mathbf{h} < boldsymbol{10}$</tex> nm exhibit electron mobility values higher than the ones reported for bulk Si at the same doping concentration. Data provide information for the design of ultra-scaled GAAFET devices." @default.
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- W4385079204 date "2023-06-11" @default.
- W4385079204 modified "2023-09-25" @default.
- W4385079204 title "Phosphorus Deactivation and Electron Mobility Enhancement in Ultrathin Silicon Nanosheets" @default.
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- W4385079204 doi "https://doi.org/10.23919/snw57900.2023.10183976" @default.
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