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• W4385189834 abstract "Self-heating effects and short channel effects are unappealing side effects of multigate devices like gate-all-around nanowire-field-effect transistors (FETs) and fin FETs, limiting their performance and posing reliability difficulties. This paper proposes the use of the novel nanosheet FET (NsFET) for complementary metal-oxide semiconductor technology nodes that are changing. Design guidelines and basic measurements for the sub-nm node are displayed alongside a brief introduction to the roadmap to the sub-nm regime and electronic market. The device had an ION/IOFF ratio of more than 105, according to the proposed silicon-based NsFET. For low-power and high-switching applications, the results were verified and achieved quite well. When an NS width increases, although, the threshold voltage (Vth) tends to fall, resulting in a loss in subthreshold effectiveness. Furthermore, the proposed device performance, like subthreshold swing ION/IOFF, was studied with a conventional 2D FET. Hence, the proposed NsFET can be a frontrunner for ultra-low power and high-speed switching applications." @default.
• W4385189834 created "2023-07-25" @default.
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• W4385189834 date "2023-07-24" @default.
• W4385189834 modified "2023-09-27" @default.
• W4385189834 title "Design and Analysis of Nanosheet Field-Effect Transistor for High-Speed Switching Applications" @default.
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• W4385189834 doi "https://doi.org/10.1155/2023/6460617" @default.
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