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- W4385190735 abstract "C/C-SiC-HfC composites were fabricated by using Precursor Infiltration and Pyrolysis (PIP) combined with Gaseous Silicon Infiltration (GSI) process. Different GSI temperatures (1900 ℃ and 2100 ℃) were selected. The combination of PIP and GSI could significantly reduce the preparation time of the composites. The morphology displaying a rich-Si layer was formed on the surface of the composites prepared at GSI 2100 ℃. Ablation performance of the composites was investigated by oxyacetylene torch. The results showed that after ablation for 120 s, compared to the composites prepared by PIP+1900 ℃ GSI, the linear and mass ablation rates of the composites fabricated by PIP+2100 ℃ GSI were decreased from 8.05 μm/s to 5.06 μm/s and from 1.61 mg/s to 1.03 mg/s, respectively. The coverage of the rich-Si surface layer promoted the generation of more SiO2 during ablation, which not only benefited for decreasing the surface temperature but also contributed to the formation of H-Si-O glass and the HfO2 skeleton, thus better resisting the denudation of the oxyacetylene torch." @default.
- W4385190735 created "2023-07-25" @default.
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- W4385190735 date "2023-09-01" @default.
- W4385190735 modified "2023-10-12" @default.
- W4385190735 title "Ablation behaviour of C/C-HfC-SiC composites prepared by joint route of precursor infiltration and pyrolysis and gaseous silicon infiltration" @default.
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- W4385190735 doi "https://doi.org/10.1016/j.cja.2023.07.018" @default.
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