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- W4385192251 abstract "We report on deeply scaled AlN/GaN HEMTs demonstrating power added efficiency (PAE) of 56% and 780 mW/mm output power at 94 GHz. This high transistor efficiency at W-band is enabled by in-situ SiN passivation, a 40-nm T-gate, and by scaling the source-to-drain length to <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$0.23 mu mathrm{m}$</tex> using electron-beam lithography. Scaled source-to-drain length and regrown n+ GaN ohmic contacts result in a HEMT on-resistance ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$R_{on}$</tex> ) of 0.35 ohm-mm, maximum drain current ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$I_{d, max}$</tex> ) of 2.3 A/mm, and a peak transconductance ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$g_{mp}$</tex> ) of 1.2 S/mm. Small-signal RF measurements show a 231 GHz cut-off frequency ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$f_{T}$</tex> ) and 503 GHz maximum oscillation frequency ( <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$f_{max}$</tex> ). Large-signal load-pull characterization shows that PAE is maintained above 46% with an associated saturated power of 3.1 W/mm at 94 GHz. This new T3.5 technology enables fabrication of a continuum of device geometries and is backwards compatible with HRL's current T3 foundry node." @default.
- W4385192251 created "2023-07-25" @default.
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- W4385192251 date "2023-06-25" @default.
- W4385192251 modified "2023-10-14" @default.
- W4385192251 title "W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz" @default.
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- W4385192251 doi "https://doi.org/10.1109/drc58590.2023.10187016" @default.
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