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• W4385194698 abstract "This article investigates a hybrid ferroelectric charge trap (HFCT)-based HfZrO4/HfOXNY/ Al2O3/AlGaN/GaN gate-stack under constant positive gate voltage stress over time and temperature variability. The experimentally characterized breakdown (BD) analysis implies a thermally assisted tunneling (TAT) BD owing to the negative temperature coefficient of BD voltage. Moreover, the step gate stress depicts a relatively lower BD voltage of ~20 V compared to the linear gate stress voltage of ~21.85 V attributed to performance degradation due to stress. In addition, the Weibull distribution, which validates the intrinsic degradation of the gate-stack, is used to estimate its lifetime. An operating voltage of ~7.41 V exhibits a ten-year lifetime at 150 °C extrapolated over multiple stress conditions. Furthermore, the activation energy from ~0.63 to ~0.67 eV validates deep-level E3 traps within the GaN barrier layer and the trapping of electrons during degradation, thus, revealing the point-level defect generation leading to the time-dependent gate dielectric BD (TDDB). The robustness and superior reliability of the HFCT gate-stack are recognized, and the single degradation mechanism contributes to the final device failure in the TDDB test." @default.
• W4385194698 created "2023-07-25" @default.
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• W4385194698 date "2023-09-01" @default.
• W4385194698 modified "2023-10-16" @default.
• W4385194698 title "High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al₂O₃, Ferro-Electric Charge-Trap (FEG) GaN-HEMT" @default.
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• W4385194698 doi "https://doi.org/10.1109/ted.2023.3295766" @default.
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