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- W4385216636 abstract "Abstract Graphene is grown directly on c -, a -, m -, and r -plane sapphire substrates by CVD, and their structures and electrical properties are compared. The obtained graphene is always polycrystalline, but the grain size is dependent on the sapphire surface orientation. The largest and smallest grains respectively appear on the m - and c -planes, and the graphene grown on the a - and r -planes has intermediate grain sizes. The carrier mobility is the largest for the graphene grown on the m -plane, indicating that the grain boundaries make a significant impact on the carrier transport as scattering centers. Nevertheless, the RT Hall effect mobility measured for the mm-sized m -plane samples reaches 7000 cm 2 V −1 s −1 . m -plane sapphire is promising as an insulating substrate for direct graphene growth." @default.
- W4385216636 created "2023-07-25" @default.
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- W4385216636 date "2023-08-01" @default.
- W4385216636 modified "2023-10-16" @default.
- W4385216636 title "Influence of substrate sapphire orientation on direct CVD growth of graphene" @default.
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- W4385216636 doi "https://doi.org/10.35848/1347-4065/acea0b" @default.
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