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W4385223539 abstract "State-of-the-art Metal Induced Lateral Crystallization (MILC) techniques have been demonstrated for 3D flash memory with ultra-high (over 300) layers. For the first time, 14$-mu$m-long macaroni silicon (Si) channels in vertical memory hole are fully single-crystallized. Furthermore, by using newly developed nickel (Ni) gettering technique, the 112 word-line-layer 3D flash memory exhibits cell array performances such as read noise reduction of 40% or more, and 10-times channel conductance without any degradations of cell reliability." @default.
W4385223539 created "2023-07-25" @default.
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W4385223539 date "2023-06-11" @default.
W4385223539 modified "2023-09-27" @default.
W4385223539 title "Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash Memory" @default.
W4385223539 doi "https://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185401" @default.
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