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- W4385249972 abstract "In this investigation, the photoelectric properties of InSe/HfS2 van der Waals heterostructure (vdwH) are investigated based on the first-principles calculations. The results show that the lowest −0.59 eV binding energy and the 0.67 eV indirect bandgap are achieved at a layer spacing of 3.31 Å, the type-II band alignment and Z-scheme charge transfer mechanism are more favorable for collection and separation photogenerated carriers. Further calculations show that the electronic structure and of the heterostructure can be regularly adjusted from an indirect bandgap to direct bandgap by an applied electric field and strain. Further, the bandgap size of the heterostructure can be effectively changed and finally make a semiconductor-to-metal transition at electric fields of 0.7 V/Å and strains of −9%. In addition, the optical absorption coefficient of heterojunction relative to the two monolayers has been enhanced, reaching a surprisingly 1.03 × 106 cm−1 at 148.5 nm. This investigation of InSe/HfS2 heterostructure can provide a theoretical basis for the application in future photoelectric devices." @default.
- W4385249972 created "2023-07-26" @default.
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- W4385249972 date "2023-11-01" @default.
- W4385249972 modified "2023-09-26" @default.
- W4385249972 title "Tuning electronic properties of Z-scheme InSe/HfS2 heterostructure by external electric field and biaxial strain" @default.
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- W4385249972 doi "https://doi.org/10.1016/j.mssp.2023.107753" @default.
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