FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4385346788> ?p ?o ?g. }

• W4385346788 endingPage "3198" @default.
• W4385346788 startingPage "3198" @default.
• W4385346788 abstract "Chemical mechanical planarization (CMP) is a wafer-surface-polishing planarization technique based on a wet procedure that combines chemical and mechanical forces to fully flatten materials for semiconductors to be mounted on the wafer surface. The achievement of devices of a small nano-size with few defects and good wafer yields is essential in enabling IC chip manufacturers to enhance their profits and become more competitive. The CMP process is applied to produce many IC generations of nanometer node, or those of even narrower line widths, for a better performance and manufacturing feasibility. Slurry is a necessary supply for CMP. The most critical component in slurry is an abrasive particle which affects the removal rates, uniformity, defects, and removal selectivity for the materials on the wafer surface. The polishing abrasive is the source of mechanical force. Conventional CMP abrasives consist of colloidal silica, fume silica or other inorganic polishing particles in the slurries. We were the first to systematically study nanoparticles of the polymer type applied in CMP, and to compare traditional inorganic and polymer nanoparticles in terms of polishing performance. In particular, the polymer nanoparticle size, shape, solid content dosing ratio, and molecular types were examined. The polishing performance was measured for the polishing removal rates, total defect counts, and uniformity. We found that the polymer nanoparticles significantly improved the total defect counts and uniformity, although the removal rates were lower than the rates obtained using inorganic nanoparticles. However, the lower removal rates of the polymer nanoparticles are acceptable due to the thinner film materials used for smaller IC device nodes, which may be below 10 nm. We also found that the physical properties of polymer nanoparticles, in terms of their size, shape, and different types of copolymer molecules, cause differences in the polishing performance. Meanwhile, we used statistical analysis software to analyze the data on the polishing removal rates and defect counts. This method helps to determine the most suitable polymer nanoparticle for use as a slurry abrasive, and improves the reliability trends for defect counts." @default.
• W4385346788 created "2023-07-29" @default.
• W4385346788 creator A5007168882 @default.
• W4385346788 creator A5080657659 @default.
• W4385346788 date "2023-07-27" @default.
• W4385346788 modified "2023-09-30" @default.
• W4385346788 title "Polymer Nanoparticles Applied in the CMP (Chemical Mechanical Polishing) Process of Chip Wafers for Defect Improvement and Polishing Removal Rate Response" @default.
• W4385346788 cites W1112915661 @default.
• W4385346788 cites W1123412527 @default.
• W4385346788 cites W1524879971 @default.
• W4385346788 cites W1846002087 @default.
• W4385346788 cites W1950178454 @default.
• W4385346788 cites W1964495681 @default.
• W4385346788 cites W1968618846 @default.
• W4385346788 cites W1991753396 @default.
• W4385346788 cites W1995065075 @default.
• W4385346788 cites W2004652085 @default.
• W4385346788 cites W2019879481 @default.
• W4385346788 cites W2027728596 @default.
• W4385346788 cites W2045255995 @default.
• W4385346788 cites W2052013114 @default.
• W4385346788 cites W2053673512 @default.
• W4385346788 cites W2063944065 @default.
• W4385346788 cites W2075194566 @default.
• W4385346788 cites W2090092194 @default.
• W4385346788 cites W21175463 @default.
• W4385346788 cites W2127767984 @default.
• W4385346788 cites W2147950901 @default.
• W4385346788 cites W2163249050 @default.
• W4385346788 cites W2266582548 @default.
• W4385346788 cites W2280263675 @default.
• W4385346788 cites W2285103820 @default.
• W4385346788 cites W2295910129 @default.
• W4385346788 cites W2319188262 @default.
• W4385346788 cites W2330630852 @default.
• W4385346788 cites W2340024762 @default.
• W4385346788 cites W2346205343 @default.
• W4385346788 doi "https://doi.org/10.3390/polym15153198" @default.
• W4385346788 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37571091" @default.
• W4385346788 hasPublicationYear "2023" @default.
• W4385346788 type Work @default.
• W4385346788 citedByCount "0" @default.
• W4385346788 crossrefType "journal-article" @default.
• W4385346788 hasAuthorship W4385346788A5007168882 @default.
• W4385346788 hasAuthorship W4385346788A5080657659 @default.
• W4385346788 hasBestOaLocation W43853467881 @default.
• W4385346788 hasConcept C111368507 @default.
• W4385346788 hasConcept C127313418 @default.
• W4385346788 hasConcept C127413603 @default.
• W4385346788 hasConcept C138113353 @default.
• W4385346788 hasConcept C155672457 @default.
• W4385346788 hasConcept C159985019 @default.
• W4385346788 hasConcept C160671074 @default.
• W4385346788 hasConcept C171250308 @default.
• W4385346788 hasConcept C180088628 @default.
• W4385346788 hasConcept C187530423 @default.
• W4385346788 hasConcept C192562407 @default.
• W4385346788 hasConcept C2778024142 @default.
• W4385346788 hasConcept C2778517922 @default.
• W4385346788 hasConcept C2780957350 @default.
• W4385346788 hasConcept C2781448156 @default.
• W4385346788 hasConcept C42360764 @default.
• W4385346788 hasConcept C521977710 @default.
• W4385346788 hasConcept C94293008 @default.
• W4385346788 hasConceptScore W4385346788C111368507 @default.
• W4385346788 hasConceptScore W4385346788C127313418 @default.
• W4385346788 hasConceptScore W4385346788C127413603 @default.
• W4385346788 hasConceptScore W4385346788C138113353 @default.
• W4385346788 hasConceptScore W4385346788C155672457 @default.
• W4385346788 hasConceptScore W4385346788C159985019 @default.
• W4385346788 hasConceptScore W4385346788C160671074 @default.
• W4385346788 hasConceptScore W4385346788C171250308 @default.
• W4385346788 hasConceptScore W4385346788C180088628 @default.
• W4385346788 hasConceptScore W4385346788C187530423 @default.
• W4385346788 hasConceptScore W4385346788C192562407 @default.
• W4385346788 hasConceptScore W4385346788C2778024142 @default.
• W4385346788 hasConceptScore W4385346788C2778517922 @default.
• W4385346788 hasConceptScore W4385346788C2780957350 @default.
• W4385346788 hasConceptScore W4385346788C2781448156 @default.
• W4385346788 hasConceptScore W4385346788C42360764 @default.
• W4385346788 hasConceptScore W4385346788C521977710 @default.
• W4385346788 hasConceptScore W4385346788C94293008 @default.
• W4385346788 hasIssue "15" @default.
• W4385346788 hasLocation W43853467881 @default.
• W4385346788 hasLocation W43853467882 @default.
• W4385346788 hasLocation W43853467883 @default.
• W4385346788 hasOpenAccess W4385346788 @default.
• W4385346788 hasPrimaryLocation W43853467881 @default.
• W4385346788 hasRelatedWork W1968031169 @default.
• W4385346788 hasRelatedWork W2068772981 @default.
• W4385346788 hasRelatedWork W2076501399 @default.
• W4385346788 hasRelatedWork W2106409363 @default.
• W4385346788 hasRelatedWork W2123982555 @default.
• W4385346788 hasRelatedWork W2132350042 @default.
• W4385346788 hasRelatedWork W2314263575 @default.
• W4385346788 hasRelatedWork W2650476999 @default.
• W4385346788 hasRelatedWork W2753607170 @default.
• W4385346788 hasRelatedWork W2921131276 @default.

• next