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• W4385453635 abstract "The intrinsic gate resistance ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{R}_{text{g_text{in}}}text{)}$</tex-math> </inline-formula> , which is a novel resistance factor embedded in transistors, was determined for silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). The study demonstrated that <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{R}_{text{g_text{in}}}$</tex-math> </inline-formula> is overestimated in the conventional measurement scheme due to the contact resistance <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{R}_{text{sp}}$</tex-math> </inline-formula> between p-type SiC and the source electrode. Here, 6.7 m <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$Omega cdot$</tex-math> </inline-formula> cm <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$^{text{2}}$</tex-math> </inline-formula> was measured for <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{R}_{text{sp}}$</tex-math> </inline-formula> using the transfer length method (TLM), and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{R}_{text{g_text{in}}}$</tex-math> </inline-formula> <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$=$</tex-math> </inline-formula> 9 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$Omega $</tex-math> </inline-formula> was the revised value, unlike the conventional value of 25 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$Omega $</tex-math> </inline-formula> . This improved <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{R}_{text{g_text{in}}}$</tex-math> </inline-formula> provides better-simulated switching waveforms in a double-pulse test (DPT) with a SiC MOSFET; however, the method requires detailed knowledge of the target device. Accordingly, we developed another measurement scheme without such prerequisites. In this scheme, three types of impedance ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{Z}text{)}$</tex-math> </inline-formula> were measured: <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>Z</i> between the drain (D) and source terminal (S), and two <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{Z}_{text{s}}$</tex-math> </inline-formula> between the gate and S, with DS left open and short. From these results, <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{R}_{text{g_text{in}}}$</tex-math> </inline-formula> was determined to be 8.8 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$Omega $</tex-math> </inline-formula> with other device parasitic parameters simultaneously." @default.
• W4385453635 created "2023-08-02" @default.
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• W4385453635 date "2023-09-01" @default.
• W4385453635 modified "2023-10-16" @default.
• W4385453635 title "Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance" @default.
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• W4385453635 doi "https://doi.org/10.1109/ted.2023.3297567" @default.
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