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• W4385454916 endingPage "P08001" @default.
• W4385454916 startingPage "P08001" @default.
• W4385454916 abstract "Abstract Surface damage caused by ionizing radiation in SiO 2 passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to the Si/SiO 2 -interface. High density positive interface net charge can be detrimental to the operation of a multi-channel n -on- p sensor since the inversion layer generated under the Si/SiO 2 -interface can cause loss of position resolution by creating a conduction channel between the electrodes. In the investigation of the radiation-induced accumulation of oxide charge and interface traps, a capacitance-voltage characterization study of n/ γ - and γ -irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed that close agreement between measurement and simulation were possible when oxide charge density was complemented by both acceptor- and donor-type deep interface traps with densities comparable to the oxide charges. Corresponding inter-strip resistance simulations of a n -on- p sensor with the tuned oxide charge density and interface traps show close agreement with experimental results. The beneficial impact of radiation-induced accumulation of deep interface traps on inter-electrode isolation may be considered in the optimization of the processing parameters of isolation implants on n -on- p sensors for the extreme radiation environments." @default.
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• W4385454916 date "2023-08-01" @default.
• W4385454916 modified "2023-09-27" @default.
• W4385454916 title "Modeling of surface damage at the Si/SiO₂-interface of irradiated MOS-capacitors" @default.
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• W4385454916 doi "https://doi.org/10.1088/1748-0221/18/08/p08001" @default.
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