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- W4385486502 abstract "Ion implantation is used to create electrically active layers by implanting a dopant species and then activating it by high temperature annealing. The purpose of the latter is to both repair damage caused by the implant step and move the implanted ions onto substitutional lattice sites where they are electrically active. The bombardment with energetic ions of initially doped regions can also be utilized to convert these to high resistivity regions selectively on a wafer by creating a large density of carrier traps. Each of the wide and ultra-wide semiconductors have specific issues during implantation. Ion implantation doping of diamond is performed at elevated temperatures (400–600 °C) to prevent bulk phase transition-graphitization. High annealing temperature (>1450 °C) under vacuum (∼10−6 mTorr) is performed to activate the implanted ions, but unavoidable surface graphitization may still occur during annealing. Residual damage in GaN has the nature of n-type conductivity. SiC is also generally implanted at an elevated temperature and must be activated by subsequent annealing >1500 °C. For most semiconductors, the implant activation temperature generally follows a two-thirds rule with respect to the melting point." @default.
- W4385486502 created "2023-08-03" @default.
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- W4385486502 date "2023-01-01" @default.
- W4385486502 modified "2023-10-18" @default.
- W4385486502 title "Ion implantation in wide and ultra-wide bandgap semiconductors" @default.
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