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• W4385517048 abstract "AlGaN-based UVC LEDs have encountered a problem of low reverse Electro-Static Discharge (ESD) and low light efficiency due to the high Al composition in their epitaxial structure, which results in low reliability and lifetime degradation. In this study, a reverse diode (ESD device) was added to the device fabrication of the AlGaN-based flip-chip UVC LED to improve the negative ESD capability. By optimizing the design of the ESD protection diode and the N contact, the negative ESD capability can be significantly increased from -150V to -1800V, effectively solving the problem of weak ESD in AlGaN-based UVC LEDs. Additionally, the Light Output Power (LOP) and Wall-Plug Efficiency (WPE) can be increased by 10-18%." @default.
• W4385517048 created "2023-08-04" @default.
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• W4385517048 date "2023-10-15" @default.
• W4385517048 modified "2023-10-17" @default.
• W4385517048 title "Improving the Electrostatic Capacity and Efficiency of UVC LEDs by Embedded Anti-Parallel Diode" @default.
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• W4385517048 doi "https://doi.org/10.1109/lpt.2023.3301595" @default.
• W4385517048 hasPublicationYear "2023" @default.
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