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- W4385525287 abstract "In this work, we demonstrate for the first time a two-stage high throughput fine-pitch die-to-wafer Copper-Copper (Cu) thermal compression bonding (TCB) technique, which has a throughput of <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$> 300$</tex> units-per-hour (UPH), with the potential to increase the throughput to 1100 UPH. We have optimized the bonding for high throughput, high overlay accuracy and low contact resistance with a die-to-substrate bump pitch of <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$leq 10mu mathrm{m}$</tex> extendible to <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$sim 7mu mathrm{m}$</tex> pitch. The average shear force per <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$2times 2 text{mm}^{2}$</tex> die after high throughput TCB is <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$> 110$</tex> N. The average specific contact resistance of the Cu-Cu contact is <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$1.24times 10^{-9}Omegacdot text{cm}^{2}$</tex> , comparable to the lowest reported in Cu/SiO2 hybrid bonding. The simplicity of TCB compared to hybrid bonding (HB) makes it a preferred approach for heterogeneous integration for 3D stacking, interposers, and the Silicon Interconnect Fabric (Si-IF) down to ~ <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$7 mumathrm{m}$</tex> bonding pitches." @default.
- W4385525287 created "2023-08-04" @default.
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- W4385525287 date "2023-05-01" @default.
- W4385525287 modified "2023-09-26" @default.
- W4385525287 title "A High Throughput Two-Stage Die-to-Wafer Thermal Compression Bonding Scheme for Heterogeneous Integration" @default.
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- W4385525287 doi "https://doi.org/10.1109/ectc51909.2023.00067" @default.
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