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- W4385525358 abstract "This paper presents a 3D flexible Fan-Out Wafer-Level Packaging (FOWLP) approach to enhance the integration density, safety, and reliability of wearable devices. Within this structure, the Li-ion battery and wireless charging module are positioned on the backside of the wearable device, while the data acquisition and processing module is powered by Through-Glass Vias (TGVs) on the front. This study examined the conditions and rates of plasma dry etching of Polydimethylsiloxane (PDMS), revealing an etching rate of up to 0.49 <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$mu mathrm{m}$</tex> /min. The minimum etchable pattern size of 150 <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$mu mathrm{m}$</tex> is achieved. Furthermore, a bending test was conducted with a 2mm bending radius for 1000 cycles, which revealed only a 7% change in resistance of the 40 <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$mu mathrm{m}$</tex> pitch Cu interconnects. The findings of this work provide a foundation for further development in integrating flexible hybrid electronics in the z-direction." @default.
- W4385525358 created "2023-08-04" @default.
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- W4385525358 date "2023-05-01" @default.
- W4385525358 modified "2023-09-26" @default.
- W4385525358 title "3D flexible Fan-Out Wafer-Level Packaging for Wearable Devices" @default.
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- W4385525358 doi "https://doi.org/10.1109/ectc51909.2023.00106" @default.
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