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• W4385532437 abstract "In this study, we developed a novel negative-tone i-line photosensitive dielectric material (PSDM) with fine resolution and high insulation reliability. We achieved 0.7 micrometer L/S patterns with an aspect ratio of 3.7 using an i-line stepper with a numerical aperture (NA) of 0.5. We simulated the depth of focus (DOF) at NAs of 0.5 and 0.24 and obtained a PSDM with a wider DOF at an NA of 0.24. Further, we developed a test vehicle with 1 micrometer L/S patterns using the semi-additive process and evaluated the insulation reliability using a biased highly accelerated stress test (BHAST). The resistance was 100 megaohm after 200 h of the BHAST." @default.
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• W4385532437 date "2023-05-01" @default.
• W4385532437 modified "2023-09-26" @default.
• W4385532437 title "Lithographic Performance and Insulation Reliability of a Novel i-Line Photosensitive Dielectric Material" @default.
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• W4385532437 doi "https://doi.org/10.1109/ectc51909.2023.00016" @default.
• W4385532437 hasPublicationYear "2023" @default.
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