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- W4385541368 endingPage "107736" @default.
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- W4385541368 abstract "III-nitride semiconductors have crystallographic polarity; therefore, controlling the polarity of these materials can realize novel device structures. However, this has been difficult to achieve while also controlling the thickness of each layer with different polarity without increasing the threading dislocation densities (TDDs) in conventional epitaxial growth methods. By combining the high-temperature face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) and oxygen impurity control near the interface, in this study we actively controlled FFA Sp-AlN to produce either N-polarity or Al-polarity. Moreover, we combined this polarity control method with the double sputtering and annealing method to achieve vertical polarity heterostructures that have controllable layer thickness without increasing the TDDs." @default.
- W4385541368 created "2023-08-04" @default.
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- W4385541368 date "2023-11-01" @default.
- W4385541368 modified "2023-09-30" @default.
- W4385541368 title "Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing" @default.
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- W4385541368 doi "https://doi.org/10.1016/j.mssp.2023.107736" @default.
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