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- W4385612988 abstract "We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in silicon carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater than 1 when the source gas for CVD was dimethylsilane (DMS). Thus, we tried to change carbon-inclusion levels in the film by injecting some ion beams into a depositing SiC film during the CVD process with DMS. Three ion beams, i.e., Si+, SiCH5+, or C+ ions were injected to depositing SiC films. The energy of Si+, SiCH5+, and C+ ions was 110 eV. The temperature of the substrate was 800 °C. X-ray diffraction of the deposited films showed that 3C–SiC was included in all three samples. X-ray photoelectron spectroscopy (XPS) showed that the C/Si ratio of the obtained SiC film increased significantly following the Si+ or C+ ion beam irradiations. The XPS measurements also showed that the C/Si ratio of the SiC film obtained by injecting SiCH5+ beam during thermal CVD with DMS was lower than that of the SiC film formed by thermal CVD with DMS alone." @default.
- W4385612988 created "2023-08-07" @default.
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- W4385612988 date "2023-08-01" @default.
- W4385612988 modified "2023-10-16" @default.
- W4385612988 title "Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane" @default.
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- W4385612988 doi "https://doi.org/10.1016/j.heliyon.2023.e19002" @default.
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