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- W4385614458 abstract "The near-infrared InGaAs/InP avalanche photodiode (APD) is a key device in the field of communication, lidar, resource exploration, etc, but it often suffers from the low absorption coefficient around 1550 nm. Thermal carriers excited by surface plasmons (SPs) have extensive development prospects in photoelectric detection and application because of its unique optical properties. Using the properties of SPs to enhance light absorption, it is applicable to improve the performance of traditional InGaAs/InP APD in the form of metallic two-dimension hole arrays on the detector. In this paper, finite-difference time-domain (FDTD) method was used to simulate the SP enhancement effects on APD. The control variable method was used to study the influence of the parameter of metallic two-dimension hole arrays on transmission and light field distribution. The results indicate the high localization of the SPs and enhanced absorption at 1550 nm, supporting the development of photodetectors towards high sensitivity and high responsivity even using traditional devices." @default.
- W4385614458 created "2023-08-07" @default.
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- W4385614458 date "2023-08-07" @default.
- W4385614458 modified "2023-10-12" @default.
- W4385614458 title "Surface plasmon enhanced InGaAs/InP APD based on mass-produced epitaxial materials" @default.
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- W4385614458 doi "https://doi.org/10.1117/12.2686986" @default.
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