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- W4385615097 abstract "Amorphous indium tin oxide (ITO) films were prepared on sapphire, spinel and aluminosilicate glass, and the effects of sputtering process and annealing process on the sheet resistance, transmittance and film stress of the film were studied. The results show that when the Ar/O<sub>2</sub> ratio of the ITO film is 30/0.8-30/2.2, as the oxygen partial pressure increases, the sheet resistance of the ITO film decreases firstly and then increases. The electrical properties of the ITO films obtained by the same sputtering process on different substrates are basically the same. The transmittance at 550nm of the annealed sample is higher than that before annealing, but the transmittance of the annealed sapphire sample is higher than that of spinel. This is because the difference in transmittance of the substrate. The film produced compressive stress under sputtering process, and the compressive stress decreased with the increase of annealing temperature. Tensile stress increases with increasing annealing temperature. Considering the influence of annealing temperature on the optical and electrical properties of the film, 400°C was finally determined as the optimal crystallization temperature." @default.
- W4385615097 created "2023-08-07" @default.
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- W4385615097 date "2023-08-07" @default.
- W4385615097 modified "2023-10-16" @default.
- W4385615097 title "Study on the effect of Ar/O2 on the performance of ITO film sputtered on the transparent ceramic substrate" @default.
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- W4385615097 doi "https://doi.org/10.1117/12.2686999" @default.
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