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- W4385637295 abstract "In this study, we report on the ultra-short lifetime of excited intersubband electrons in a 38 Å wide AlGaN/GaN-based quantum well. The rapid decay of these charge carriers occurs due to a resonance between the relevant intersubband transition energy and the size of the GaN-based LO-phonon at 92 meV. Based on the experimentally observed Lorentz-shaped intersubband emission peak with a spectral width of roughly 6 meV (48 cm−1) respecting the Fourier transform limit, a very short lifetime, namely 111 fs, could be calculated. By comparing this lifetime to the existing literature data, our value confirms the potential high-speed capability of III-nitride-based optoelectronics." @default.
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- W4385637295 date "2023-08-07" @default.
- W4385637295 modified "2023-09-27" @default.
- W4385637295 title "Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV" @default.
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- W4385637295 doi "https://doi.org/10.3390/photonics10080909" @default.
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