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- W4385655208 abstract "Abstract GaAsBi nanowires represent a novel and promising material platform for future nano-photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a challenge due to a large miscibility gap between GaAs and GaBi. In this work we investigate effects of Bi incorporation on lattice dynamics and carrier recombination processes in GaAs/GaAsBi core/shell nanowires grown by molecular-beam epitaxy. By employing photoluminescence (PL), PL excitation, and Raman scattering spectroscopies complemented by scanning electron microscopy, we show that increasing Bi-beam equivalent pressure (BEP) during the growth does not necessarily result in a higher alloy composition but largely affects the carrier localization in GaAsBi. Specifically, it is found that under high BEP, bismuth tends either to be expelled from a nanowire shell towards its surface or to form larger clusters within the GaAsBi shell. Due to these two processes the bandgap of the Bi-containing shell remains practically independent of the Bi BEP, while the emission spectra of the NWs experience a significant red shift under increased Bi supply as a result of the localization effect." @default.
- W4385655208 created "2023-08-09" @default.
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- W4385655208 date "2023-08-08" @default.
- W4385655208 modified "2023-09-24" @default.
- W4385655208 title "Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires" @default.
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- W4385655208 doi "https://doi.org/10.1038/s41598-023-40217-2" @default.
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- W4385655208 hasPublicationYear "2023" @default.
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