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- W4385655989 abstract "In this paper, we present a study regarding the influence of the deposition time on the annealed ITO films thickness, structural, optical and electrical properties Thin films were deposited on a glass substrate by DC magnetron sputtering method from a ceramic target In <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</inf> :SnO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> (90:10 wt.%) for different deposition time of 15 minutes, 20 minutes, 25 minutes and 30 minutes. After deposition, ITO films were annealed at 400ºC for 6 hours in oxygen medium. Analysis from X-ray patterns shows that the intensity of the main peak corresponding to (222) plane increases with film thickness; this is explained by the increases in the degree of preferential orientation in crystal domains from thin films. The optical transmittance in visible domain for ITO films show a decrease with the increasing of film thickness, showing an average values of 87.39% for ITO15, 83.20% for ITO20, 83.08% for ITO25, and 73.69% for ITO30. For the best opto-electrical properties, the figure of merit, FOM, for ITO films, are shown by the samples ITO 25 and ITO30, the highest value of FOM being for ITO30, 6.52×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-3</sup> Ω <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> ." @default.
- W4385655989 created "2023-08-09" @default.
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- W4385655989 date "2023-07-02" @default.
- W4385655989 modified "2023-09-25" @default.
- W4385655989 title "Influence of Deposition Time on the Opto-Electronic Properties of 400 °C Annealed ITO Thin Films Deposited by DC Magnetron Sputtering" @default.
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- W4385655989 doi "https://doi.org/10.1109/icton59386.2023.10207534" @default.
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