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• W4385663376 endingPage "415201" @default.
• W4385663376 startingPage "415201" @default.
• W4385663376 abstract "Raman and photoluminescence spectra were investigated in the In+ and As + ion-implanted SiO2 films encapsulated with Si3N4 layers as a function of annealing temperature. The optical phonon frequency, as a function of the InAs nanocrystal size, was also calculated within the confined phonon model. The Raman scattering band of around 231 cm−1, close to the low-frequency shifted longitudinal optical phonon mode in the InAs matrix, was observed as the annealing temperature increased to 900 °C. The InAs nanocrystal size of 3 nm was estimated. The strong room-temperature photoluminescence peaking at 550 nm (2.25 eV) was also obtained under the 473 nm wavelength excitation. Its intensity reached a maximum value as the annealing temperature increased to 1000 °C. Its peak position was blue-shifted as the excitation wavelength decreased. The direct irradiative electron and hole recombination in the InAs nanocrystals was proposed as a possible mechanism of this photoluminescence." @default.
• W4385663376 created "2023-08-09" @default.
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• W4385663376 date "2023-10-01" @default.
• W4385663376 modified "2023-10-17" @default.
• W4385663376 title "Raman scattering and photoluminescence in In+ and As+ ion-implanted SiO2 layers encapsulated with Si3N4" @default.
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• W4385663376 doi "https://doi.org/10.1016/j.physb.2023.415201" @default.
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