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• W4385757673 abstract "In this work, we reveal a correlation between the evolution of the channel electric field profile and dynamic ON resistance ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${Delta} textit{R}_{bios{on}}$</tex-math> </inline-formula> ) behavior of AlGaN/GaN HEMTs when subjected to cyclic nanosecond pulse stress on the drain terminal. Two scenarios of field profile evolution were studied: 1) field peak shifting from gate/field plate edge (GE/FP) to drain edge (DE) and 2) field peaking near GE/FP edge but not showing any shift. The devices exhibiting a shift in the electric field peak to DE in response to the cyclic stress showed a unique increase in <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${Delta} textit{R}_{bios{on}}$</tex-math> </inline-formula> which was absent in devices that did not show any such field shift. Factors accelerating this field shift to DE, including drain bias, channel current, and stress pulsewidth (PW), were found to accelerate the increase in <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${Delta} textit{R}_{bios{on}}$</tex-math> </inline-formula> . Furthermore, the devices exhibiting such an increase in <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${Delta} textit{R}_{bios{on}}$</tex-math> </inline-formula> showed a slower recovery of the ON-resistance when compared to devices with field peak only near the GE/FP edge. Physical insights were developed using detailed experimentation and well-calibrated computations, which could capture the observed phenomenon. The developed insights and proposed mechanisms were then experimentally validated by studying the dependence of the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${Delta} textit{R}_{bios{on}}$</tex-math> </inline-formula> behavior on: 1) passivation thickness-induced electric field profile modulation and 2) substrate temperature-induced trapping/detrapping rate modulation." @default.
• W4385757673 created "2023-08-12" @default.
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• W4385757673 date "2023-01-01" @default.
• W4385757673 modified "2023-10-18" @default.
• W4385757673 title "Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic $textit{R}_{bio{ON}}$ Behavior in AlGaN/GaN HEMTs—Part II" @default.
• W4385757673 doi "https://doi.org/10.1109/ted.2023.3300652" @default.
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