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• W4385782981 abstract "The 2022 edition of the 9th International Workshop on Nitride Semiconductors (IWN) took place in Berlin, Germany, from October 9 to 14, 2022. The conference was chaired by Michael Kneissl (TU Berlin) and Jürgen Christen (University of Magdeburg). This important biennial event encompasses all aspects of III-nitride semiconductor science, engineering, and industry. The 2022 workshop continued the tradition of successful gatherings in various locations: Kanazawa, Japan (2818), Orlando, USA (2016), Wrocław, Poland (2014), Sapporo, Japan (2012), Tampa, USA (2010), Montreux, Switzerland (2008), Kyoto, Japan (2006), Pittsburgh, USA (2004), Aachen, Germany (2002), and Nagoya, Japan (2000). The participation at IWN 2022 in Berlin surpassed expectations following a two-year break due to the pandemic, with over 800 scientists representing 32 countries in attendance. The topics of the workshop ranged from novel nitride materials and nanostructures, to growth and fabrication, to characterization and fundamental physics, to electrical and optical devices. Two tutorial speakers (Andreas Waag, TU Braunschweig) and Chris Van de Walle (UCSB) opened the workshop, by discussing GaN-based micro-LEDs and point defects, respectively. Excellent presentations were given by six plenary speakers, who covered a wide range of topics of great interest to the community: Hiroshi Amano (Nagoya University) discussed about deep UV laser diodes, as an example of overcoming the semiconducting limits; Stacia Keller (UCSB) talked about lattice constant engineering for long wavelength nitride emitters; Matteo Meneghini (University of Padova) gave a presentation on defect- and reliability-related aspects, covering both GaN electronics and optoelectronics; Herbert Pairitsch (Infineon) gave a perspective on the applicability of recent advances in material research performed within the research project UltimateGaN; Euijoon Yoon (Seoul National University) gave an overview of recent progress and prospects of micro-LEDs grown on sapphire nano-membranes; Huili Grace Xing (Cornell University) gave a talk entitled “Reveal the true self of GaN by tunneling and avalanche”. The program was then enriched by the presentations of 67 invited speakers, 251 oral presenters, and 416 poster presentations, who covered all topics of interest for optoelectronic and electronic applications of GaN. The workshop organizers express their gratitude to the plenary and invited speakers, rump session chairs, panelists, and short-course presenters for their exceptional contributions to an engaging workshop. They would also like to recognize the industrial sponsors for their generous financial support. Additionally, the program committee's relentless efforts in soliciting and reviewing abstracts are greatly appreciated. A total of 62 submissions were received for the conference publications in the special issues of physica status solidi (a) and (b). All submissions underwent the standard peer-review process of the journals. Out of these submissions, 39 were selected for publication in physica status solidi (a), and 16 were chosen for publication in physica status solidi (b), all featured in a dedicated issue of pss. Among these, two were Review papers: an article entitled “Recent Progress of E-mode GaN MIS-HEMTs with Hybrid Ferroelectric Charge Trap Gate (FEG-HEMT) for Power Switching Applications”, by Jui-Sheng Wu, Edward Yi Chang et al. (National Yang Ming Chiao Tung University) [Phys. Status Solidi A 2023, 220, 2300018], and a paper entitled “On the Origin of the Yellow Luminescence Band in GaN”, by Michael A. Reshchikov (Virginia Commonwealth University) [Phys. Status Solidi B 2023, 260, 2200488]. The published articles encompass a comprehensive array of topics that were addressed during the workshop. Our appreciation goes to Gaia Tomasello and Stefan Hildebrandt for their valuable editorial peer-review work and to Heike Höpcke and Matt Lock for the post-acceptance assembly of this publication. In conclusion, we extend our gratitude to all the workshop attendees who actively contributed to making IWN 2022 a lively and enjoyable event. We eagerly anticipate the opportunity to reunite with you in O'ahu (Hawaii) for the next International Workshop on Nitride Semiconductors in November 2024. Michael Kneissl, TU Berlin (Germany) Jürgen Christen, University of Magdeburg (Germany) Conference Chairs Axel Hoffmann, TU Berlin (Germany) Bo Monemar, Linköping University (Sweden) Honorary Chairs Tim Wernicke, TU Berlin (Germany) Conference Secretary Ulrich Schwarz, TU Chemnitz (Germany) Local Chair Åsa Haglund, Chalmers University of Technology (Sweden) Matteo Meneghini, University of Padova (Italy) Guest Editors and Publication Chairs" @default.
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• W4385782981 date "2023-08-01" @default.
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• W4385782981 title "Nitride Semiconductors" @default.
• W4385782981 doi "https://doi.org/10.1002/pssb.202300286" @default.
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