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- W4385832480 abstract "Ambipolar FETs were designed and fabricated based on the Ph-BTBT-10/PMMA/ZnO structure by a solution process." @default.
- W4385832480 created "2023-08-16" @default.
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- W4385832480 date "2023-01-01" @default.
- W4385832480 modified "2023-09-30" @default.
- W4385832480 title "High-performance Ambipolar Field-effect Transistors with Ph-BTBT-10/PMMA/ZnO structure" @default.
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- W4385832480 doi "https://doi.org/10.1039/d3tc02519e" @default.
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