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• W4385834599 abstract "Carrier emission rate accelerates from a trap with the increase in drain voltage due to the self-heating (SH) and Poole–Frenkel (PF) emission effects; thus, the conventional Arrhenius analysis underestimates the trap activation energy. For this purpose, this work estimates the zero-field (actual) activation energy of a trap in InAlN/GaN and AlN/GaN high-electron mobility transistors (HEMTs) by including SH and PF effects in the emission rate equation. The HEMT thermal resistance ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{R}_{text{TH}}$</tex-math> </inline-formula> ) is computed from the technology computer aided design (TCAD) simulation results. Subsequently, the SH-induced increase in the channel temperature ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${sfDelta}textit{T}$</tex-math> </inline-formula> ) is incorporated in the Arrhenius plot, constructed from drain current transient (DCT) and output-admittance ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{Y}_{text{22}}$</tex-math> </inline-formula> ) parameters. The apparent trap activation energy ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{E}_{text{ap}}$</tex-math> </inline-formula> ) is calculated from the measured DCT and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{Y}_{text{22}}$</tex-math> </inline-formula> at different drain voltages, and the respective electric field ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>F</i> ) at each bias condition is extracted from the simulation. Finally, zero-field activation energy ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{E}_{text{0}}$</tex-math> </inline-formula> ) is estimated from the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{E}_{text{ap}}$</tex-math> </inline-formula> versus ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>F</i> ) <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$^{text{0.5}}$</tex-math> </inline-formula> plot intercept. <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{E}_{text{0}}$</tex-math> </inline-formula> for the well-known Fe-related buffer trap is identified at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{E}_{textit{C}}- text{0.7}$</tex-math> </inline-formula> eV in the InAlN/GaN HEMT. Similarly, <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{E}_{text{0}}$</tex-math> </inline-formula> at <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{E}_{textit{C}}- text{0.51}$</tex-math> </inline-formula> eV is found for the trap in the C-doped AlN/GaN HEMT." @default.
• W4385834599 created "2023-08-16" @default.
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• W4385834599 date "2023-01-01" @default.
• W4385834599 modified "2023-10-18" @default.
• W4385834599 title "Estimation of Zero-Field Activation Energy for Traps in Fe-and C-Doped GaN-Based HEMTs" @default.
• W4385834599 doi "https://doi.org/10.1109/ted.2023.3302280" @default.
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