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- W4385978377 abstract "This paper presents two power amplifiers designed for 5G NR n77 and n78 bands. These power amplifiers were fabricated using WINTM Semiconductors’ 0.25 μm GaN/SiC technology and GaAs IPD technology. To achieve a reduction in costs, GaAs IPD technology was incorporated in the design, leading to the realization of a quasi-monolithic microwave integrated circuit design. To ensure high power, high efficiency, and broadband operation, a continuous Class-J mode output matching network was utilized. The power amplifier with split chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.85 GHz to 4.48 GHz, a saturation power of 40.3 dBm, and a peak power-added efficiency of 39.5%. On the other hand, the power amplifier with stack chip-on-board wire-bond assembly had a power gain of 21.7 dB, a 3 dB power bandwidth ranging from 2.84 GHz to 4.47 GHz, a saturation power of 40 dBm, and a peak power-added efficiency of 36.5%. For a 5G NR FR1 256-QAM 100-MHz bandwidth modulated signal with a frequency range of 3.3 GHz to 4.2 GHz, both the split and stack chip-on-board wire-bond assembly power amplifiers achieved average output powers of 29.6 dBm and 28.3 dBm, respectively. These output powers were measured under an error vector magnitude requirement of 3.5%." @default.
- W4385978377 created "2023-08-19" @default.
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- W4385978377 date "2023-08-17" @default.
- W4385978377 modified "2023-10-17" @default.
- W4385978377 title "High-Efficiency and Cost-Effective 10 W Broadband Continuous Class-J Mode Quasi-MMIC Power Amplifier Design Utilizing 0.25 μm GaN/SiC and GaAs IPD Technology for 5G NR n77 and n78 Bands" @default.
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- W4385978377 doi "https://doi.org/10.3390/electronics12163494" @default.
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