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• W4385987540 abstract "Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 μm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing." @default.
• W4385987540 created "2023-08-19" @default.
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• W4385987540 date "2023-08-18" @default.
• W4385987540 modified "2023-10-15" @default.
• W4385987540 title "Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe₂ Dirac Semimetal" @default.
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• W4385987540 doi "https://doi.org/10.1021/acs.nanolett.3c02396" @default.
• W4385987540 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37594857" @default.
• W4385987540 hasPublicationYear "2023" @default.
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