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- W4386001616 abstract "The performance of chip is degraded because of the short-channel effect (SCE) as the metal oxide semiconductor field effect transistor (MOSFET) size scales down. Silicon on insulator (SOI) technology helps to reduce the short channel effects and permits a good solution to the miniaturization. The electrical characteristics of fully depleted SOI (FDSOI) and partially depleted SOI (PDSOI) n-channel MOSFET (N-MOSFET) are investigated as silicon film thickness is varied in this paper. Both transistors are compared in terms of electrical parameters which are the threshold voltage, subthreshold slope, on-state current, leakage current and drain induced barrier lowering (DIBL). Silvaco TCAD tools are used for simulating both PDSOI and FDSOI MOSFETs. FDSOI MOSFET is superior to PDSOI MOSFET based on found simulation results." @default.
- W4386001616 created "2023-08-20" @default.
- W4386001616 creator A5051455512 @default.
- W4386001616 date "2023-08-12" @default.
- W4386001616 modified "2023-10-12" @default.
- W4386001616 title "In vestigation the Impact of Silicon Film Thickness on FDSOI and PDSOI MOSFET Characteristics" @default.
- W4386001616 doi "https://doi.org/10.34257/gjrefvol23is2pg1" @default.
- W4386001616 hasPublicationYear "2023" @default.
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