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- W4386002444 abstract "Abstract This study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. This approach avoids the issues associated with the use of phosphorus compounds, which are evident in the crystal growth of conventional C/L‐band QD lasers, making the manufacturing process safer, simpler, and more cost‐effective. The threshold current density of the fabricated QD laser was 633 A/cm 2 , which is the lowest value for QD lasers in the 1.6‐µm wavelength region. This result suggests a high cost‐effectiveness and paves the way towards a large‐scale production technology for high‐performing C/L/U‐band QD lasers." @default.
- W4386002444 created "2023-08-20" @default.
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- W4386002444 date "2023-08-01" @default.
- W4386002444 modified "2023-10-12" @default.
- W4386002444 title "All III‐arsenide low threshold InAs quantum dot lasers on InP(001)" @default.
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- W4386002444 doi "https://doi.org/10.1049/ell2.12920" @default.
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