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- W4386003403 abstract "High sensitivity of metal oxide gas sensors has increased the tendency to use them in various applications. The sensitivity of metal oxide sensors exposed to target gases is determined based on their electrical resistance. To determine the resistance, the resistance model of each grain is usually used and it is generalized to the whole sensor. Here, a new and simple model is used to extract the electrical resistance of a spherical metal oxide grain. Also, the effect of various factors on this resistance, such as grain size, surface potential and donor density is studied. Next, by examining the chemical reactions of the surface, the transient response of a spherical metal oxide grain to oxygen and hydrogen gases is extracted. The results of the gas-dependent resistivity model show that changing the structural and reaction parameters changes the electrical resistance of the metal oxide grain and thus changes the sensitivity of these sensors." @default.
- W4386003403 created "2023-08-20" @default.
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- W4386003403 date "2023-11-01" @default.
- W4386003403 modified "2023-10-12" @default.
- W4386003403 title "A general gas-dependent resistivity model for metal oxide semiconductor gas sensors considering the kinetics of charge transfer on the surface" @default.
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- W4386003403 doi "https://doi.org/10.1016/j.snb.2023.134488" @default.
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