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- W4386005147 abstract "Nonlinear on-chip applications require materials with high linear and nonlinear refractive indices combined with low or negligible two photon absorption. Thanks to its extremely low attenuation, the stoichiometric silicon nitride is currently the most studied material. However, several alternative materials have appeared and benefit from higher nonlinearity: <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$text{Ta}_{2}mathrm{O}_{5}$</tex> [1], <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$text{TiO}_{2}$</tex> [2] and the non-stoichiometric silicon nitride which can be richer in nitrogen [3] or in silicon [4]. This material can be processed by different chemical vapor deposition (CVD) based approaches: Low Pressure LP-CVD [5], Plasma Enhanced PE-CVD [2] or Inductively Coupled Plasma ICP-CVD [7]. In our facilities, we use the latest to get thin films of non-stoichiometric SiN with indices ranging from 1.7 (nitrogen rich) to more than 3 (ultra-silicon-rich)." @default.
- W4386005147 created "2023-08-20" @default.
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- W4386005147 date "2023-06-26" @default.
- W4386005147 modified "2023-09-27" @default.
- W4386005147 title "ICP-CVD Silicon-Rich Silicon Nitride for Supercontinuum Generation" @default.
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- W4386005147 doi "https://doi.org/10.1109/cleo/europe-eqec57999.2023.10232003" @default.
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