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- W4386010133 abstract "The achievement of universal quantum computing critically relies on scalability. However, ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable fluctuations in valley splitting energy ( E VS ) across quantum dot arrays, which impede the initialization of qubit systems comprising multiple spins and give rise to spin–valley entanglement resulting in the loss of spin information. These E VS fluctuations have been attributed to variations in the in-plane averaged alloy concentration along the confinement direction of Si/SiGe quantum wells. In this study, employing atomistic pseudopotential calculations, we unveil a significant spectrum of E VS even in the absence of such concentration fluctuations. This spectrum represents the lower limit of the wide range of E VS observed in numerous Si/SiGe quantum devices. By constructing simplified interface atomic step models, we analytically demonstrate that the lower bound of the E VS spread originates from the in-plane random distribution of Si and Ge atoms within SiGe barriers — an inherent characteristic that has been previously overlooked. Additionally, we propose an interface engineering approach to mitigate the in-plane randomness-induced fluctuations in E VS by inserting a few monolayers of pure Ge barrier at the Si/SiGe interface. Our findings provide valuable insights into the critical role of in-plane randomness in determining E VS in Si/SiGe quantum devices and offer reliable methods to enhance the feasibility of scalable Si-based spin qubits." @default.
- W4386010133 created "2023-08-21" @default.
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- W4386010133 date "2023-10-01" @default.
- W4386010133 modified "2023-10-05" @default.
- W4386010133 title "Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface" @default.
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- W4386010133 doi "https://doi.org/10.1088/1674-1056/acf208" @default.
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