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- W4386014772 abstract "This paper is an extensive study of AlGaN/GaN HEMT and MOSHEMT. Two structures have been simulated, a HEMT and a MOSHEMT structure and their characteristics have been obtained and studied. The gate optimization has been done in this research work. The oxide used beneath the gate contact is made of aluminum oxide with thickness 14 nm. The gate length has been reduced to 250 nm to improve upon the current gain cutoff frequency. The gate leakage current is found to be zero for a greater range of gate voltage in case of MOSHEMT which makes it suitable for radio frequency power applications." @default.
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- W4386014772 date "2023-01-01" @default.
- W4386014772 modified "2023-10-02" @default.
- W4386014772 title "Study and Analysis of AlGaN/GaN-Based HEMT and MOSHEMT" @default.
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- W4386014772 doi "https://doi.org/10.1007/978-981-99-3691-5_20" @default.
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