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• W4386014792 abstract "Currently, Graphene is emerging as the magic material in the electronics industry. Graphene possesses an excellent range of material properties that include superb mobility, electrical conductivity, high thermal conductivity, mechanical strength as well as flexibility. Besides, Graphene is a transparent material. Further, Graphene is also remarkably suitable for bio-electronic applications due to its anti-bacterial properties, low Joule heat generation, and high density that allow rapid passage for water evaporation. Also, Graphene is promising for low-power VLSI design as a result of its low drive power consumption. However, its one drawback that prohibits the large-scale, low-cost implementation of Graphene electronics is its non-existent bandgap. Therefore, both research and commercial fraternities are on a quest of suitable method for bandgap opening in Graphene. Several methods including light incidence, impurity doping, etc. have been investigated. But, very little has been availed till date. Moreover, all such methods come with inherent drawbacks that are as significant as decrease in mobility. The current paper proposes a coupled strain–spin engineering technique for inducing bandgap in Graphene. Since Graphene is two-dimensional material, therefore, a supporting substrate is a basic necessity in Graphene electronics. This paper proposes MgO and TiO2 substrates for mounting Graphene-conducting layer. This, in turn, results in a considerable bandgap in Graphene. Subsequently, magnetic spin effect might be used to tailor such bandgap, according to the requirement of the implementation. Further, by proper application and withdrawal of applied electric field, such strain-induced bandgap might be used for information and memory electronics. ANSYS Multiphysics simulator has been calibrated with experimental observations and has been subsequently used to compare the analytical results." @default.
• W4386014792 created "2023-08-21" @default.
• W4386014792 creator A5009370163 @default.
• W4386014792 date "2023-01-01" @default.
• W4386014792 modified "2023-10-02" @default.
• W4386014792 title "Gap Opening in Graphene by Substrate-Induced Strain Engineering Coupled with Magnetic Spin- Engineering" @default.
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• W4386014792 doi "https://doi.org/10.1007/978-981-99-3691-5_33" @default.
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