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- W4386135516 abstract "${mathrm{LaInO}}_{3}$ is a lattice-matched barrier material for the confinement of two-dimensional electron gases at the interface with the perovskite ${mathrm{BaSnO}}_{3}$, which is known for its high room-temperature electron mobility. Here, we report the adsorption-controlled growth of epitaxial ${mathrm{LaInO}}_{3}$ by molecular beam epitaxy (MBE), a growth method that has demonstrated the highest electron mobilities in ${mathrm{SrTiO}}_{3}$ and ${mathrm{BaSnO}}_{3}$ thin films. The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In a thermodynamics of MBE diagram, the experimental growth window was found to be significantly narrower than the theoretically predicted one. We found the critical thickness for strain relaxation of the ${mathrm{LaInO}}_{3}$ layer on ${mathrm{DyScO}}_{3}$(110) substrates (lattice mismatch $ensuremath{approx}ensuremath{-}4%$) to be 1 nm using in situ reflection high-energy electron diffraction analysis. The substrate and film possess an orthorhombic crystal structure which can be approximated by a pseudocubic lattice. X-ray-diffraction analysis revealed the pseudocube-on-pseudocube epitaxial relationship of the ${mathrm{LaInO}}_{3}$ films to the ${mathrm{DyScO}}_{3}$ substrates. This relation was confirmed by transmission electron microscopy, which further resolved the presence of rotational orthorhombic domains, the majority of which have a $c$ axis that coincides with that of the substrate. Raman spectroscopy further confirmed the presence of a ${mathrm{LaInO}}_{3}$ layer. Our findings provide the missing building block for the realization of two-dimensional electron gases with high room-temperature electron mobilities at the MBE-grown heterointerface with ${mathrm{BaSnO}}_{3}$." @default.
- W4386135516 created "2023-08-25" @default.
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- W4386135516 date "2023-08-24" @default.
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- W4386135516 title "Adsorption-controlled plasma-assisted molecular beam epitaxy of <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:msub><mml:mi mathvariant=normal>LaInO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> on <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:msub><mml:mi mathvariant=normal>DyScO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> (110): Growth window, strain relaxation, and domain pattern" @default.
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- W4386135516 doi "https://doi.org/10.1103/physrevmaterials.7.084605" @default.
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