Matches in SemOpenAlex for { <https://semopenalex.org/work/W4386157182> ?p ?o ?g. }
- W4386157182 endingPage "115002" @default.
- W4386157182 startingPage "115002" @default.
- W4386157182 abstract "Abstract Quantum computing is expected to break the computing power bottleneck with the help of quantum superposition and quantum entanglement. In order to fabricate fault-tolerant quantum computers for encoding quantum information, it is important to improve the cryogenic mobility of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) with a thin gate dielectric layer as much as possible. Based on a thin SiO 2 /HfO 2 stacked dielectric, we investigate the effect of post-deposition annealing (PDA) temperature on the MOSFET cryogenic transport properties. The results show that silicon atoms will diffuse into the HfO 2 to form silicates during PDA, leading to the HfO 2 dielectric constant decrease. As the PDA temperature increases, the proportion of monoclinic hafnium oxide decreases and the tetragonal phase increases gradually. The oxygen vacancy content increases gradually, resulting in fixed charge density increases and the mobility decreases. The contribution of the forming gas annealing (FGA) to the mobility enhancement is clarified and the HfO 2 recrystallization process is revealed from the perspective of long-time annealing. Finally, the mobility peak of silicon MOSFETs with thin SiO 2 /HfO 2 dielectrics is enhanced to 1387 cm 2 (V·s) −1 at 1.6 K, which provides a technical pathway for the development of silicon-based quantum computation." @default.
- W4386157182 created "2023-08-26" @default.
- W4386157182 creator A5000359400 @default.
- W4386157182 creator A5009993283 @default.
- W4386157182 creator A5018858341 @default.
- W4386157182 creator A5039172269 @default.
- W4386157182 creator A5049341926 @default.
- W4386157182 creator A5054023011 @default.
- W4386157182 creator A5054771812 @default.
- W4386157182 creator A5085233751 @default.
- W4386157182 creator A5089108403 @default.
- W4386157182 date "2023-09-14" @default.
- W4386157182 modified "2023-10-14" @default.
- W4386157182 title "Effect of high temperature annealing on cryogenic transport properties of silicon MOSFET with a thin SiO2/HfO2 stacked dielectric" @default.
- W4386157182 cites W1969840935 @default.
- W4386157182 cites W1992988771 @default.
- W4386157182 cites W1993556524 @default.
- W4386157182 cites W2002765787 @default.
- W4386157182 cites W2003992904 @default.
- W4386157182 cites W2007391198 @default.
- W4386157182 cites W2007851634 @default.
- W4386157182 cites W2012398415 @default.
- W4386157182 cites W2014079303 @default.
- W4386157182 cites W2019221551 @default.
- W4386157182 cites W2023235714 @default.
- W4386157182 cites W2045529556 @default.
- W4386157182 cites W2057849725 @default.
- W4386157182 cites W2061882567 @default.
- W4386157182 cites W2063442328 @default.
- W4386157182 cites W2067763535 @default.
- W4386157182 cites W2075732988 @default.
- W4386157182 cites W2092507167 @default.
- W4386157182 cites W2118857749 @default.
- W4386157182 cites W2122748173 @default.
- W4386157182 cites W2127686923 @default.
- W4386157182 cites W2127840831 @default.
- W4386157182 cites W2145832131 @default.
- W4386157182 cites W2166944685 @default.
- W4386157182 cites W2484805601 @default.
- W4386157182 cites W2564423994 @default.
- W4386157182 cites W2577384105 @default.
- W4386157182 cites W2734847488 @default.
- W4386157182 cites W2787090633 @default.
- W4386157182 cites W2808007855 @default.
- W4386157182 cites W2901096083 @default.
- W4386157182 cites W2991130191 @default.
- W4386157182 cites W3017369590 @default.
- W4386157182 cites W3102004576 @default.
- W4386157182 cites W3104949556 @default.
- W4386157182 cites W3105133963 @default.
- W4386157182 cites W3122511478 @default.
- W4386157182 cites W3157026862 @default.
- W4386157182 cites W3182699438 @default.
- W4386157182 cites W3183254726 @default.
- W4386157182 cites W3211403086 @default.
- W4386157182 cites W4205796750 @default.
- W4386157182 cites W4221122251 @default.
- W4386157182 cites W4224212504 @default.
- W4386157182 cites W4239873278 @default.
- W4386157182 cites W4283755401 @default.
- W4386157182 cites W4294030573 @default.
- W4386157182 cites W4312222810 @default.
- W4386157182 cites W4376256356 @default.
- W4386157182 cites W4377018467 @default.
- W4386157182 cites W597886269 @default.
- W4386157182 doi "https://doi.org/10.1088/1361-6641/acf407" @default.
- W4386157182 hasPublicationYear "2023" @default.
- W4386157182 type Work @default.
- W4386157182 citedByCount "0" @default.
- W4386157182 crossrefType "journal-article" @default.
- W4386157182 hasAuthorship W4386157182A5000359400 @default.
- W4386157182 hasAuthorship W4386157182A5009993283 @default.
- W4386157182 hasAuthorship W4386157182A5018858341 @default.
- W4386157182 hasAuthorship W4386157182A5039172269 @default.
- W4386157182 hasAuthorship W4386157182A5049341926 @default.
- W4386157182 hasAuthorship W4386157182A5054023011 @default.
- W4386157182 hasAuthorship W4386157182A5054771812 @default.
- W4386157182 hasAuthorship W4386157182A5085233751 @default.
- W4386157182 hasAuthorship W4386157182A5089108403 @default.
- W4386157182 hasConcept C106782819 @default.
- W4386157182 hasConcept C119599485 @default.
- W4386157182 hasConcept C121332964 @default.
- W4386157182 hasConcept C127413603 @default.
- W4386157182 hasConcept C133386390 @default.
- W4386157182 hasConcept C159985019 @default.
- W4386157182 hasConcept C16317505 @default.
- W4386157182 hasConcept C165801399 @default.
- W4386157182 hasConcept C166972891 @default.
- W4386157182 hasConcept C172385210 @default.
- W4386157182 hasConcept C192562407 @default.
- W4386157182 hasConcept C26873012 @default.
- W4386157182 hasConcept C2777855556 @default.
- W4386157182 hasConcept C2778413303 @default.
- W4386157182 hasConcept C49040817 @default.
- W4386157182 hasConcept C544956773 @default.
- W4386157182 hasConceptScore W4386157182C106782819 @default.
- W4386157182 hasConceptScore W4386157182C119599485 @default.
- W4386157182 hasConceptScore W4386157182C121332964 @default.