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• W4386171486 abstract "Abstract Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures. A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts. The spin injection efficiency of 21% was achieved at 1.7 K. It was confirmed that the thin Schottky barrier formed between the heavily n-doped GaN and Co was conducive to the direct spin tunneling, by reducing the spin scattering relaxation through the interface states." @default.
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• W4386171486 date "2023-08-01" @default.
• W4386171486 modified "2023-09-22" @default.
• W4386171486 title "Spin injection into heavily-doped n-GaN via Schottky barrier" @default.
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• W4386171486 doi "https://doi.org/10.1088/1674-4926/44/8/082501" @default.
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