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- W4386190883 abstract "This article improves the mobility part of the ASM GaN model, and provides the corresponding multi-temperature DC parameter extraction process based on the existing ASM GaN model, in order to address the accuracy of the ASM GaN model at different working environment temperatures in AlGaN/GaN HEMT Devices. In addition, this article validates the accuracy of the improved ASM model through parameter fitting. Compared with previous models, the modified model has higher accuracy and fewer temperature parameter values in the parameter extraction process at multiple temperatures." @default.
- W4386190883 created "2023-08-27" @default.
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- W4386190883 date "2023-08-26" @default.
- W4386190883 modified "2023-10-16" @default.
- W4386190883 title "The Improvement of ASM GaN Model Applied to Multi-temperature Bias in AlGaN/GaN HEMT Devices" @default.
- W4386190883 doi "https://doi.org/10.22541/au.169303156.64619871/v1" @default.
- W4386190883 hasPublicationYear "2023" @default.
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