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- W4386212295 abstract "Metal-oxide-based resistive random access memory (RRAM) synaptic devices typically suffer from high variability and strongly nonlinear conductance change. In this work, we demonstrate a SiO <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_textit{x}$</tex-math> </inline-formula> -based synapse with low operating voltages, excellent uniformity in the switching operation, and analog tunability of conductance. The devices also exhibit linear and symmetric conductance update. We demonstrate that the enhanced uniformity and analog tunability can be attributed to an interfacial switching mechanism which can be controlled through careful optimization of the device operating conditions." @default.
- W4386212295 created "2023-08-29" @default.
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- W4386212295 date "2023-10-01" @default.
- W4386212295 modified "2023-09-27" @default.
- W4386212295 title "Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiO$_textit{x}$/Au Resistive Memory Devices" @default.
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- W4386212295 doi "https://doi.org/10.1109/ted.2023.3305580" @default.
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