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• W4386280761 abstract "In this letter, a high performance quasivertical GaN-on-Si Schottky barrier diode (SBD) was fabricated by combing in-situ p-GaN layer with hydrogen plasma treatment and controlled diffusion as edge terminations (ETs), where the main junction region of Schottky contact is emerged by pattern etching the top p-GaN layer. The p-n junction with higher barrier height can screen the Schottky contact from high electric field induced by field crowding effect. The hydrogen plasma treatment and controlled diffusion applied to the p-GaN layer further reduces the electric field crowding effect near the p-n junction edge via a gradient junction termination extension structure. As a result, the breakdown voltage of the edge p-GaN terminated SBD with H treatment and diffusion is significantly boosted from 140 V in conventional SBD to 500 V with optimized fabrication process. The on/off current ratio of the diode is as high as 1011@±3 V. The forward current density is 1.45 kA/cm2@3 V and the specific on-resistance is 1.57 mΩ∙cm2." @default.
• W4386280761 created "2023-08-31" @default.
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• W4386280761 date "2023-01-01" @default.
• W4386280761 modified "2023-10-02" @default.
• W4386280761 title "Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated with Hydrogen Modulated In-situ pn Junction" @default.
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• W4386280761 doi "https://doi.org/10.1109/jeds.2023.3309972" @default.
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