FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4386315900> ?p ?o ?g. }

• W4386315900 endingPage "43123" @default.
• W4386315900 startingPage "43111" @default.
• W4386315900 abstract "Spin qubits based on Si and Si1–xGex quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here, we use hybrid functional calculations to investigate possible atomistic sources of charge noise, focusing on charge trapping at Si and Ge dangling bonds (DBs). We evaluate the role of global and local environment in the defect levels associated with DBs in Si, Ge, and Si1–xGex alloys, and consider their trapping and excitation energies within the framework of configuration coordinate diagrams. We additionally consider the influence of strain and oxidation in charge-trapping energetics by analyzing Si and GeSi DBs in SiO2 and strained Si layers in typical Si1–xGex quantum dot heterostructures. Our results identify that Ge dangling bonds are more problematic charge-trapping centers both in typical Si1–xGex alloys and associated oxidation layers, and they may be exacerbated by compositional inhomogeneities. These results suggest the importance of alloy homogeneity and possible passivation schemes for DBs in Si-based quantum dot qubits and are of general relevance to mitigating possible trap levels in other Si, Ge, and Si1–xGex-based metal-oxide-semiconductor stacks and related devices." @default.
• W4386315900 created "2023-09-01" @default.
• W4386315900 creator A5046254716 @default.
• W4386315900 creator A5056344177 @default.
• W4386315900 creator A5089128933 @default.
• W4386315900 date "2023-08-31" @default.
• W4386315900 modified "2023-09-30" @default.
• W4386315900 title "Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon–Germanium Quantum Dot Qubits" @default.
• W4386315900 cites W1509182036 @default.
• W4386315900 cites W1571908061 @default.
• W4386315900 cites W1963934009 @default.
• W4386315900 cites W1970127494 @default.
• W4386315900 cites W1973411962 @default.
• W4386315900 cites W1981867445 @default.
• W4386315900 cites W1982224839 @default.
• W4386315900 cites W1982353990 @default.
• W4386315900 cites W1985131633 @default.
• W4386315900 cites W1991370562 @default.
• W4386315900 cites W1995539803 @default.
• W4386315900 cites W1995940513 @default.
• W4386315900 cites W2001770153 @default.
• W4386315900 cites W2006166977 @default.
• W4386315900 cites W2007386293 @default.
• W4386315900 cites W2007395042 @default.
• W4386315900 cites W2009991079 @default.
• W4386315900 cites W2015773728 @default.
• W4386315900 cites W2025030624 @default.
• W4386315900 cites W2027514328 @default.
• W4386315900 cites W2031766550 @default.
• W4386315900 cites W2035270798 @default.
• W4386315900 cites W2041492467 @default.
• W4386315900 cites W2041769800 @default.
• W4386315900 cites W2043711375 @default.
• W4386315900 cites W2044205553 @default.
• W4386315900 cites W2046739467 @default.
• W4386315900 cites W2052175480 @default.
• W4386315900 cites W2057953544 @default.
• W4386315900 cites W2061266314 @default.
• W4386315900 cites W2070086908 @default.
• W4386315900 cites W2075228661 @default.
• W4386315900 cites W2076343339 @default.
• W4386315900 cites W2076462975 @default.
• W4386315900 cites W2078570946 @default.
• W4386315900 cites W2083222334 @default.
• W4386315900 cites W2085093563 @default.
• W4386315900 cites W2085095806 @default.
• W4386315900 cites W2085301154 @default.
• W4386315900 cites W2087514840 @default.
• W4386315900 cites W2092554885 @default.
• W4386315900 cites W2103282498 @default.
• W4386315900 cites W2127686923 @default.
• W4386315900 cites W2130383665 @default.
• W4386315900 cites W2147720517 @default.
• W4386315900 cites W2160844903 @default.
• W4386315900 cites W2165294844 @default.
• W4386315900 cites W2388008412 @default.
• W4386315900 cites W2398344174 @default.
• W4386315900 cites W2464044014 @default.
• W4386315900 cites W2486150719 @default.
• W4386315900 cites W2523194864 @default.
• W4386315900 cites W2586327449 @default.
• W4386315900 cites W2589250515 @default.
• W4386315900 cites W2734174867 @default.
• W4386315900 cites W2744464002 @default.
• W4386315900 cites W2745278755 @default.
• W4386315900 cites W2757022439 @default.
• W4386315900 cites W2953943766 @default.
• W4386315900 cites W2958244801 @default.
• W4386315900 cites W2962992159 @default.
• W4386315900 cites W2989387189 @default.
• W4386315900 cites W3098730831 @default.
• W4386315900 cites W3099562062 @default.
• W4386315900 cites W3105519543 @default.
• W4386315900 cites W3105987905 @default.
• W4386315900 cites W3125039022 @default.
• W4386315900 cites W3134751374 @default.
• W4386315900 cites W4306654072 @default.
• W4386315900 cites W4311749146 @default.
• W4386315900 cites W4311823640 @default.
• W4386315900 cites W4361190280 @default.
• W4386315900 cites W4367175859 @default.
• W4386315900 cites W85970651 @default.
• W4386315900 doi "https://doi.org/10.1021/acsami.3c06725" @default.
• W4386315900 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37651689" @default.
• W4386315900 hasPublicationYear "2023" @default.
• W4386315900 type Work @default.
• W4386315900 citedByCount "0" @default.
• W4386315900 crossrefType "journal-article" @default.
• W4386315900 hasAuthorship W4386315900A5046254716 @default.
• W4386315900 hasAuthorship W4386315900A5056344177 @default.
• W4386315900 hasAuthorship W4386315900A5089128933 @default.
• W4386315900 hasConcept C121332964 @default.
• W4386315900 hasConcept C124657808 @default.
• W4386315900 hasConcept C171250308 @default.
• W4386315900 hasConcept C188082385 @default.
• W4386315900 hasConcept C18903297 @default.
• W4386315900 hasConcept C192562407 @default.
• W4386315900 hasConcept C203087015 @default.

• next